FeTRAM New Power Saving Technology The combination of RAM Polymers & Silicon nanowire

Friday, September 30, 2011

A technology of RAM (Random Access Memory) has currently being developed by the researchers. With that combination, the power consumption of RAM to be more power efficient but has a much better speed.

FeTRAM, ferroelectric random acces memory transistor, is the result of a combination of a nanowire with a polymer. According to its maker in the Birck Nanotechnology Center (BNC) at Purdue University, thanks to a combination of these, FetRAM has its own performance compared with traditional RAM.

Ferroelectric materials have the ability to switch polarity in accordance with the terrain that are nearby. This property is then used by researchers at the BNC to shape it into Ferroelectric transistors that are currently on the market yet.


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